The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 28, 2026

Filed:

Feb. 01, 2023
Applicant:

Cxmt Corporation, Hefei, CN;

Inventors:

Yu-Cheng Liao, Hefei, CN;

Wenjie Liu, Hefei, CN;

Joonsuk Moon, Hefei, CN;

Assignee:

CXMT Corporation, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10B 12/30 (2023.02); H10B 12/05 (2023.02); H10D 30/6735 (2025.01);
Abstract

Provided is a semiconductor structure and a formation method therefor. The semiconductor structure includes: a gate structure located on a substrate. The gate structure includes at least two gate conductive layers; the at least two gate conductive layers have the same components and different characteristic parameters; and the characteristic parameter includes at least one of thickness, component content or shape.


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