Yu-Chen Ho

Title: Yu-Chen Ho: Innovator in Polysilicon Spacer Technology

Introduction

Yu-Chen Ho is a notable inventor based in Ban-Chiao, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming polysilicon spacers.

Latest Patents

Yu-Chen Ho holds a patent for a "Method for forming a polysilicon spacer with a vertical profile." This innovative method involves the successive deposition of a dielectric layer and a sacrificial layer over a polysilicon layer that covers an insulating structure. The process utilizes chemical mechanical polishing (CMP) to achieve a planarized surface by removing parts of the sacrificial layer, dielectric layer, and polysilicon layer. Following this, portions of the polysilicon layer outside the insulating structure are removed, allowing the insulating structures to protrude. After the sacrificial layer is removed, a second oxide layer is formed on the exposed polysilicon surface, and dry etching is employed to eliminate the polysilicon layer not covered by the second oxide layer. The remaining polysilicon layer beneath the second oxide layer serves as a polysilicon spacer with a vertical profile.

Career Highlights

Yu-Chen Ho is currently employed at Vanguard International Semiconductor Corporation, where he continues to advance semiconductor technologies. His work has been instrumental in enhancing the efficiency and performance of semiconductor devices.

Collaborations

Yu-Chen has collaborated with notable colleagues, including Fsien-Fu Meng and Chyei-Jer Hsieh, who contribute to the innovative environment at Vanguard International Semiconductor Corporation.

Conclusion

Yu-Chen Ho's contributions to polysilicon spacer technology exemplify the innovative spirit within the semiconductor industry. His patent and ongoing work at Vanguard International Semiconductor Corporation highlight his role as a key inventor in this field.