Munich, Germany

Youssef Gannoune

This inventor holds 1 USPTO granted patent. Top assignee: Infineon Technologies Ag. Active years: 2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Youssef Gannoune. Retrieved from https://idiyas.com/inventor/youssef-gannoune

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Youssef Gannoune: Innovator in Semiconductor Technology

Introduction

Youssef Gannoune is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique chip component that enhances the functionality of electronic devices.

Latest Patents

Youssef Gannoune holds a patent for a chip component and method for producing a chip component. This invention includes a semiconductor body that houses at least one switchable element. The design allows for light to reach a specific partial region of the semiconductor body, enabling the integrated circuit to assume different configurations based on the state of the switchable element. This innovative approach facilitates testing and configuration adjustments even after the fabrication process.

Career Highlights

Gannoune is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work at Infineon has positioned him as a key player in advancing semiconductor technology. With a focus on practical applications, he continues to push the boundaries of what is possible in the field.

Collaborations

Youssef collaborates with Christian Stocken, a fellow innovator in the semiconductor industry. Their partnership exemplifies the importance of teamwork in driving technological advancements.

Conclusion

Youssef Gannoune's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to the field. His work at Infineon Technologies AG continues to influence the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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