Suwon-si, South Korea

Youngkwan Cha

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Youngkwan Cha. Retrieved from https://idiyas.com/inventor/youngkwan-cha-zc54f27p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Youngkwan Cha and Semiconductor Device Innovation.

Introduction

Youngkwan Cha is an inventor based in Suwon-si, South Korea. His listed patent work concerns semiconductor devices and methods for manufacturing them.

Latest Patents

Cha is associated with 1 patent, titled “Semiconductor Device and Method of Manufacturing the Same.” The invention describes a semiconductor device with a substrate, lower and upper electrodes, and an oxide channel between them. The channel includes vertical extension portions and is doped with ions. A gate insulator covers an exposed portion of the channel, and a gate electrode is positioned on the insulator. The patent also describes methods for manufacturing semiconductor devices with this structure.

Career Highlights

Cha is associated with Samsung Electronics Ltd. His patent reflects work on semiconductor device structures and manufacturing methods.

Collaborations

Cha’s listed coworker is Moonil Jung. Their association provides context for the people connected with this semiconductor patent.

Conclusion

Youngkwan Cha’s recorded patent work focuses on an ion-doped oxide channel structure and its manufacture, highlighting his contribution to semiconductor device innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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