Company Filing History:
Years Active: 2018
Title: Younghee Kim - Innovator in 3D NAND Technology
Introduction
Younghee Kim is a notable inventor based in Boise, Idaho, recognized for his contributions to semiconductor technology. He has developed innovative solutions that enhance the performance of 3D NAND storage devices. His work is pivotal in advancing the capabilities of modern data storage.
Latest Patents
Younghee Kim holds a patent for "Polysilicon doping controlled 3D NAND etching." This invention involves a 3D NAND storage device that comprises multiple layers of doped semiconductor material interleaved with dielectric material layers. The patent details how different portions of the doped semiconductor layers can be treated with varying dopant concentrations, which significantly influences the etch rate during the formation of control gate recesses. This innovation is crucial for improving the efficiency and effectiveness of 3D NAND technology.
Career Highlights
Younghee Kim is currently employed at Intel Corporation, a leading company in semiconductor manufacturing. His role at Intel allows him to work on cutting-edge technologies that shape the future of data storage solutions. His expertise in semiconductor materials and processes has made him a valuable asset to the company.
Collaborations
Throughout his career, Younghee has collaborated with talented colleagues, including John David Hopkins and Jie Li. These partnerships have fostered an environment of innovation and creativity, leading to significant advancements in their field.
Conclusion
Younghee Kim's contributions to 3D NAND technology exemplify the impact of innovative thinking in the semiconductor industry. His patent on polysilicon doping controlled etching showcases his commitment to enhancing data storage solutions. Younghee's work continues to influence the future of technology in meaningful ways.