This inventor holds 1 USPTO granted patent. Top assignee: Applied Materials, Inc.. Active years: 2011.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2011
Title: Young Soo Kwon: Semiconductor Process Inventor
Introduction
Young Soo Kwon is an inventor based in Hwasung, South Korea. His work includes a patented method for improving trench gap filling in semiconductor manufacturing. Kwon is associated with Applied Materials, Inc.
Latest Patents
Kwon is named on one patent: Gapfill Improvement with Low Etch Rate Dielectric Liners. The invention describes a method for filling a trench by depositing a dielectric liner that resists fluorine-containing etch chemistries relative to silicon oxide. Silicon oxide is deposited in the trench and etched to reopen or widen a gap near its top. The liner protects the underlying substrate during etching, allowing the gap to be widened before additional silicon oxide is deposited to substantially fill the trench. Kwon’s listed portfolio includes 1 patent.
Career Highlights
Kwon’s patent reflects work on dielectric materials and trench-filling processes used in semiconductor fabrication. The method aims to improve gap formation while protecting the substrate during etching.
Collaborations
Kwon’s listed coworkers include Anchuan Wang and Young Seen Lee. His work is associated with Applied Materials, Inc.
Conclusion
Young Soo Kwon’s patent addresses a practical semiconductor manufacturing challenge by combining a protective dielectric liner with staged deposition and etching to improve trench filling.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile