The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 2011
Filed:
May. 07, 2009
Young Soo Kwon, Hwasung, KR;
BI Jang, Yongin, KR;
Anchuan Wang, San Jose, CA (US);
Young S. Lee, San Jose, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-qun Xia, Cupertino, CA (US);
Jin Ho Jeon, San Ramon, CA (US);
Young Soo Kwon, Hwasung, KR;
Bi Jang, Yongin, KR;
Anchuan Wang, San Jose, CA (US);
Young S. Lee, San Jose, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Jin Ho Jeon, San Ramon, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.