Gyeonggi-do, South Korea

Young-Jin Lee

This inventor holds 8 USPTO granted patents and 1 published patent application and 2 EPO patents. Top assignees: Skhynix Inc., Samsung Electronics Co., Ltd., Taeyang Electronics Co., Ltd.. Active years: 2007-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young-Jin Lee. Retrieved from https://idiyas.com/inventor/young-jin-lee-ahjm9r26

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 8 

% Patents Active = 75.0

 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 25(Granted Patents)


Location History:

  • Taegukwangyok-shi, KR (2007)
  • Gyeonggi-do, KR (2014 - 2016)

Company Filing History:


Years Active: 2007-2016

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8 patents (USPTO):Explore Patents

Title: Young-Jin Lee: Innovator in Nonvolatile Memory Technology

Introduction

Young-Jin Lee is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of eight patents. His work has advanced the technology used in memory devices, making them more efficient and reliable.

Latest Patents

Among his latest patents is a nonvolatile memory device and method for fabricating the same. This technology involves a nonvolatile memory device that includes a pipe connection gate electrode over a substrate. It features one or more pipe channel layers formed within the pipe connection gate electrode, along with pairs of main channel layers that extend in a direction substantially perpendicular to the substrate. The device also incorporates a plurality of interlayer insulating layers and cell gate electrodes that are alternately stacked along the main channel layers. Notably, metal silicide layers are configured to be in contact with the pipe connection gate electrode, which significantly reduces the electric resistance without compromising the characteristics of the memory layers.

Another patent focuses on a similar nonvolatile memory device and method of fabrication. This invention also includes a pipe connection gate electrode and various channel layers, along with etch stop layers that include metal silicide formed over the pipe connection gate electrode. These innovations contribute to the efficiency and performance of nonvolatile memory devices.

Career Highlights

Young-Jin Lee has worked with leading companies in the technology sector, including SK Hynix Inc. and Samsung Electronics Co., Ltd. His experience in these organizations has allowed him to develop and refine his expertise in memory technology.

Collaborations

Throughout his career, Young-Jin Lee has collaborated with notable colleagues such as Min-Soo Kim and Sung-Jin Whang. These partnerships have fostered innovation and contributed to the advancement of memory technology.

Conclusion

Young-Jin Lee's contributions to nonvolatile memory technology have made a significant impact in the field. His patents reflect a commitment to innovation and excellence, positioning him as a key figure in the advancement of memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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