Young-jin Cho

This inventor holds 35 USPTO granted patents and 3 published patent applications, primarily in Magnetic Memory Devices. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2004-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young-jin Cho. Retrieved from https://idiyas.com/inventor/young-jin-cho-vttlruzv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 35 (Patent Applications = 3)

% Patents Active = 57.1

Average Co-Inventor Count = 4.3

ph-index = 8

Forward Citations = 683(Granted Patents)

Location History:

Incheon, KR (2004 - 2011)
Gyeonggi-do, KR (2012)
Suwon-si, KR (2008 - 2013)

Company Filing History:

35 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2004-2013

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Areas of Expertise:

Magnetic Domain Wall Movement

Information Storage Devices

Magnetic Memory Device

Methods of Operating

Manufacturing Methods

Oscillators

Multi-Stack Memory

Dielectric Thin Films

Magnetic Structures

Data Storage Device

Semiconductor Memory Device

Chemical Vapor Deposition

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8614014 - Tracks including magnetic layer and magnetic memory devices comprising the same (2013-12-24),

2. 8574730 - Magnetic tracks, information storage devices using magnetic domain wall movement, and methods of manufacturing the same (2013-11-05),

3. 8537506 - Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement (2013-09-17),

4. 8525601 - Oscillators using magnetic domain wall and methods of operating the same (2013-09-03),

5. 8437160 - Multi-stack memory device (2013-05-07),

6. 8427247 - Oscillators and methods of operating the same (2013-04-23),

7. 8325436 - Information storage devices using magnetic domain wall movement, methods of operating the same, and methods of manufacturing the same (2012-12-04),

8. 8320152 - Information storage devices using magnetic domain wall movement and methods of operating the same (2012-11-27),

9. 8313847 - Information storage devices using magnetic domain wall movement (2012-11-20),

10. 8233305 - Magnetic structures, information storage devices including magnetic structures, methods of manufacturing and methods of operating the same (2012-07-31),

11. 8144503 - Information storage device and method of operating the same (2012-03-27),

12. 8143660 - Method for manufacturing oxide film having high dielectric constant, capacitor having dielectric film formed using the method, and method for manufacturing the same (2012-03-27),

13. 8130530 - Information storage devices using magnetic domain wall movement and methods of operating the same (2012-03-06),

14. 8045371 - Magnetic storage device having a buffer track and storage tracks, and method of operating the same (2011-10-25),

15. 8018764 - Magnetic tracks, information storage devices including magnetic tracks, and methods of operating information storage devices (2011-09-13),

Title: Young-jin Cho: Innovator in Magnetic Memory Technologies

Introduction

Young-jin Cho is a distinguished inventor based in Suwon-si, South Korea. With a remarkable portfolio of 35 patents, he has made significant contributions to the field of magnetic memory devices, pushing the boundaries of information storage technology.

Latest Patents

Young-jin Cho's latest innovations include two notable patents. The first patent focuses on tracks that incorporate a magnetic layer. This innovative magnetic memory device consists of a track where different non-magnetic layers are strategically formed on the upper and lower surfaces of the magnetic layer. Notably, one of these non-magnetic layers includes an element with an atomic number of 12 or greater, enhancing the magnetic layer's non-adiabaticity (β).

The second patent revolves around information storage devices utilizing magnetic domain wall movement. This invention describes a magnetic track within the information storage device composed of a magnetic layer that alternates between at least one magnetic domain forming region and one magnetic domain wall forming region along its length. These regions possess differing magnetic anisotropic energies, and the innovative design includes an intermediate layer beneath the magnetic layer, with varying material regions corresponding to the magnetic domain characteristics.

Career Highlights

Young-jin Cho is a respected employee at Samsung Electronics Co., Ltd., where he continues to drive innovation in the field of magnetic memory technologies. His extensive knowledge and expertise have played an essential role in advancing the company's research and development efforts.

Collaborations

Throughout his career, Young-jin has collaborated with talented individuals, including Sung-chul Lee and Sun-ae Seo. These partnerships have enabled him to contribute to groundbreaking projects and develop cutting-edge technologies in magnetic memory devices, creating impactful advancements in the field.

Conclusion

Young-jin Cho stands out as a prominent inventor specializing in magnetic memory technologies. With impressive patents that enhance information storage systems, his work at Samsung Electronics Co., Ltd. and collaborations with esteemed colleagues reflect a commitment to innovation that continues to shape the future of technology. His significant contributions pave the way for advancements in how data is stored and accessed, highlighting the importance of inventors in the rapidly evolving technological landscape.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: