The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2013
Filed:
Jun. 11, 2008
Young-jin Cho, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Kwang-seok Kim, Sengnam-si, KR;
Ji-young Bae, Busan, KR;
Sun-ae Seo, Hwaseong-si, KR;
Chang-won Lee, Seoul, KR;
Young-jin Cho, Suwon-si, KR;
Sung-chul Lee, Osan-si, KR;
Kwang-seok Kim, Sengnam-si, KR;
Ji-young Bae, Busan, KR;
Sun-ae Seo, Hwaseong-si, KR;
Chang-won Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.