You-Chen Weng

Title: You-Chen Weng: Innovator in High Electron Mobility Transistors

Introduction

You-Chen Weng is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). With a total of 2 patents, Weng's work is recognized for its innovative approaches and practical applications.

Latest Patents

Weng's latest patents include a high electron mobility transistor design and a MOCVD method for growing an InAlGaN/GaN heterostructure. The high electron mobility transistor features a growth substrate, a lattice matching layer, a back-barrier layer, an electron blocking layer, a channel layer, an active layer, a source, a gate, and a drain. The back-barrier layer is composed of GaN doped with carbon, while the electron blocking layer consists of AlGaN with specific doping percentages. This design aims to enhance the performance of HEMT devices.

The MOCVD method for growing an InAlGaN/GaN heterostructure involves sequentially growing a nitride nucleation layer, a GaN buffer layer, and an InAlGaN barrier layer on a substrate. This method allows for the in-situ growth of a SiNx protective layer, which prevents oxidation and damage to the heterostructure. This innovative approach is crucial for the fabrication of HEMT elements.

Career Highlights

Weng has worked at notable institutions such as National Yang Ming Chiao Tung University and National Chung Shan Institute of Science and Technology. His research and development efforts have significantly advanced the understanding and application of semiconductor materials.

Collaborations

Throughout his career, Weng has collaborated with esteemed colleagues, including Edward Yi Chang and Xia-Xi Zheng. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.

Conclusion

You-Chen Weng's contributions to the field of semiconductor technology, particularly in high electron mobility transistors, demonstrate his commitment to innovation. His patents and collaborative efforts continue to influence the industry and pave the way for future advancements.