National Yang Ming Chiao Tung University

National Chung Shan Institute of Science and Technology

You-Chen Weng

Edward Yi Chang

Xia-Xi Zheng

Min-Lu Kao

A high electron mobility transistor includes a growth substrate, a lattice matching layer, an back-barrier layer, an electron blocking layer, a channel layer, an active layer, a source, a gate, and a drain. The lattice matching layer and the back-barrier layer are formed on the growth substrate. The back-barrier layer includes GaN doped with C. The electron blocking layer is formed on the back-barrier layer. The electron blocking layer includes AlGaN, wherein the doping percent of Al atoms of the AlGaN is 3˜5% and the doping percent of Ga atoms of the AlGaN is 95˜97%. The electron blocking layer has a thickness of 2˜5 nm. The channel layer and the active layer are formed on the electron blocking layer. The source, the gate, and the drain are formed on the active layer.

High electron mobility transistor

A MOCVD method for growing an InAlGaN/GaN heterostructure comprises steps: sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on a substrate; using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C. in the same reaction chamber. Thereby is achieved a SiNx/InAlGaN/GaN heterostructure having an ultrathin barrier layer, which is suitable to fabricate HEMT elements. The present invention needn't take sample out of the reaction chamber and thus can prevent the heterostructure from oxidation and damage.

Growing community of inventors

Taipei, Taiwan

You-Chen Weng