The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jan. 09, 2023
Applicant:
National Yang Ming Chiao Tung University, Hsinchu, TW;
Inventors:
Assignee:
NATIONAL YANG MING CHIAO TUNG UNIVERSITY, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/0217 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02304 (2013.01); H01L 21/0262 (2013.01); H01L 21/56 (2013.01);
Abstract
A MOCVD method for growing an InAlGaN/GaN heterostructure comprises steps: sequentially growing a nitride nucleation layer, a GaN buffer layer, an InAlGaN barrier layer on a substrate; using a precursor gas containing silane to in-situ grow a SiNx protective layer on the InAlGaN barrier layer at a temperature of 950-1000° C. in the same reaction chamber. Thereby is achieved a SiNx/InAlGaN/GaN heterostructure having an ultrathin barrier layer, which is suitable to fabricate HEMT elements. The present invention needn't take sample out of the reaction chamber and thus can prevent the heterostructure from oxidation and damage.