Yosi Basson

Title: Yosi Basson: Innovator in Conductive Elements for EUVL Masks

Introduction

Yosi Basson is a notable inventor based in Holon, Israel. She has made significant contributions to the field of semiconductor manufacturing, particularly in the area of extreme ultraviolet lithography (EUVL). Her innovative work has led to the development of a unique patent that enhances the efficiency of EUVL masks.

Latest Patents

Yosi Basson holds a patent for a "Conductive element for electrically coupling an EUVL mask to a supporting chuck." This patent describes a coupling module that includes an upper portion defining an aperture, mask contact elements, chuck contact elements, and an intermediate element connecting the mask contact elements to the upper portion. The design ensures that the shape and size of the aperture correspond to the pattern transfer area of an EUVL mask. The coupling module is engineered to facilitate contact between the mask and the chuck, providing at least one conductive path when the EUVL mask is positioned on the chuck. This innovation is crucial for improving the performance of EUVL systems.

Career Highlights

Yosi Basson is currently employed at Applied Materials Israel Limited, where she continues to advance her research and development efforts. Her work at this leading company in the semiconductor industry has positioned her as a key player in the field of EUVL technology.

Collaborations

Yosi collaborates with talented individuals such as Igor Krivts (Krayvitz) and Israel Avneri, contributing to a dynamic team focused on pushing the boundaries of semiconductor technology.

Conclusion

Yosi Basson's contributions to the field of EUVL technology through her innovative patent demonstrate her expertise and commitment to advancing semiconductor manufacturing. Her work continues to impact the industry positively.