Kawasaki, Japan

Yoshiyuki Utsume

This inventor holds 1 USPTO granted patent. Top assignee: Tokyo Ohka Kogyo Co., Ltd.. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiyuki Utsume. Retrieved from https://idiyas.com/inventor/yoshiyuki-utsume

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations of Yoshiyuki Utsume

Introduction

Yoshiyuki Utsume is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of resist compositions, particularly in the development of materials used in photolithography.

Latest Patents

Utsume holds a patent for a resist composition, method of forming a resist pattern, and a polymeric compound. This innovative resist composition includes a base component that generates acid upon exposure and exhibits changed solubility in a developing solution under the action of acid. The base component contains a polymeric compound with specific structural units that enhance its functionality in various applications.

Career Highlights

Yoshiyuki Utsume is currently employed at Tokyo Ohka Kogyo Co., Ltd., where he continues to advance his research and development efforts. His work has been instrumental in improving the efficiency and effectiveness of resist materials used in semiconductor manufacturing.

Collaborations

Utsume has collaborated with notable colleagues, including Jun Iwashita and Takahiro Dazai. These partnerships have fostered innovation and have contributed to the success of various projects within the company.

Conclusion

Yoshiyuki Utsume's contributions to the field of resist compositions highlight his role as an influential inventor in the industry. His innovative work continues to impact the development of advanced materials in semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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