Aizuwakamatsu, Japan

Yoshiyuki Katani

This inventor holds 1 USPTO granted patent. Top assignee: Transphorm Japan, Inc.. Active years: 2015.


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yoshiyuki Katani

Introduction

Yoshiyuki Katani is a notable inventor based in Aizuwakamatsu, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative methods that enhance the manufacturing processes of semiconductor devices.

Latest Patents

Yoshiyuki Katani holds a patent for a semiconductor device and the method for manufacturing it. This patent describes a method that includes forming an electron transit layer on a semiconductor substrate, followed by the formation of an electron supply layer on the transit layer. Additionally, it involves creating a cap layer on the electron supply layer and a protection layer on the cap layer, which has an opening part exposing a portion of the cap layer. Finally, an oxidation film is formed on the exposed surface of the cap layer through a wet process.

Career Highlights

Yoshiyuki Katani is currently employed at Transphorm Japan, Inc., where he continues to innovate in the semiconductor industry. His expertise and dedication have positioned him as a key figure in his field.

Collaborations

Yoshiyuki collaborates with Shinichi Akiyama, contributing to advancements in semiconductor technology.

Conclusion

Yoshiyuki Katani's work in semiconductor device manufacturing showcases his innovative spirit and commitment to technological advancement. His contributions are vital to the ongoing evolution of the semiconductor industry.

Profile summary based on public USPTO records.
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