Kawasaki, Japan

Yoshitami Oka

This inventor holds 2 USPTO granted patents. Top assignees: Tokyo Shibaura Electric Co., Ltd., Toyko Shibaura Electric Co., Ltd.. Active years: 1982-1985.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshitami Oka. Retrieved from https://idiyas.com/inventor/yoshitami-oka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1982-1985

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2 patents (USPTO):Explore Patents

Title: The Innovations of Yoshitami Oka

Introduction

Yoshitami Oka is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor manufacturing. With a total of 2 patents, his work has had a lasting impact on technology.

Latest Patents

Oka's latest patents include a method of manufacturing a semiconductor device. This method involves applying a silicon carbide film with a specific perforated pattern as a masking film. This technique is used to selectively etch a silicon dioxide film or diffuse an impurity into a substrate. Another patent focuses on a similar method of manufacturing a semiconductor device using a silicon carbide mask.

Career Highlights

Throughout his career, Yoshitami Oka has worked with prominent companies such as Tokyo Shibaura Electric Co., Ltd. His experience in the industry has allowed him to develop innovative techniques that enhance semiconductor manufacturing processes.

Collaborations

Oka has collaborated with notable coworkers, including Toshio Yonezawa and Takashi Ajima. Their combined expertise has contributed to advancements in semiconductor technology.

Conclusion

Yoshitami Oka's contributions to semiconductor manufacturing through his patents and collaborations highlight his importance in the field. His innovative methods continue to influence the industry today.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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