The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 24, 1985

Filed:

Jul. 19, 1984
Applicant:
Inventors:

Toshio Yonezawa, Yokosuka, JP;

Takashi Ajima, Tokyo, JP;

Shunichi Hiraki, Yokohama, JP;

Yutaka Koshino, Tokyo, JP;

Yoshitami Oka, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
430313 ; 20412965 ; 427259 ; 156D / ; 1566591 ; 156653 ;
Abstract

A method of manufacturing a semiconductor device which comprises the step of applying a silicon carbide film having a prescribed perforated pattern as a masking film selectively to etch a silicon dioxide film or diffuse an impurity into a substrate.


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