Kawasaki, Japan

Yoshitaka Ohtsuka

This inventor holds 1 USPTO granted patent. Top assignee: Canon Anelva Corporation. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshitaka Ohtsuka. Retrieved from https://idiyas.com/inventor/yoshitaka-ohtsuka

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Innovations by Yoshitaka Ohtsuka

Introduction

Yoshitaka Ohtsuka is a notable inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the area of film formation methods.

Latest Patents

Ohtsuka holds a patent for a film formation method, vacuum processing apparatus, and methods related to semiconductor light emitting elements and electronic elements. His invention provides a film formation method and apparatus capable of fabricating an epitaxial film with +c polarity using a sputtering method. The process involves epitaxially growing a semiconductor thin film with a wurtzite structure on a heated substrate, ensuring precise control over the film formation.

Career Highlights

Ohtsuka is associated with Canon Anelva Corporation, where he has been instrumental in advancing semiconductor manufacturing technologies. His work has contributed to the development of innovative solutions in the semiconductor industry.

Collaborations

Ohtsuka has collaborated with notable colleagues such as Yoshiaki Daigo and Takuya Seino, enhancing the research and development efforts within his organization.

Conclusion

Yoshitaka Ohtsuka's contributions to semiconductor technology through his innovative patents highlight his role as a key inventor in the field. His work continues to influence advancements in semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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