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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11035034 B1

PDFFull Text
Date of Patent:
Jun. 15, 2021

Filed:

Jan. 26, 2017

Film formation method, vacuum processing apparatus, method of manufacturing semiconductor light emitting element, semiconductor light emitting element, method of manufacturing semiconductor electronic element, semiconductor electronic element, and illuminating apparatus

Applicant:

Canon Anelva Corporation, Kawasaki, JP;

Inventors:

Yoshiaki Daigo, Kawasaki, JP;

Takuya Seino, Kawasaki, JP;

Yoshitaka Ohtsuka, Kawasaki, JP;

Hiroyuki Makita, Kawasaki, JP;

Sotaro Ishibashi, Kawasaki, JP;

Kazuto Yamanaka, Kawasaki, JP;

Assignee:

CANON ANELVA CORPORATION, Kanagawa, JP;

Attorney:

Venable LLP

Primary Examiner:

Michael A Band

Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/50 (2006.01); C23C 14/54 (2006.01); C30B 23/00 (2006.01); C30B 23/06 (2006.01); C30B 29/40 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/32 (2010.01); C30B 23/08 (2006.01); C30B 29/16 (2006.01); H01L 33/28 (2010.01);
U.S. Cl.
CPC ...
C23C 14/0617 (2013.01); C23C 14/3435 (2013.01); C23C 14/50 (2013.01); C23C 14/54 (2013.01); C23C 14/541 (2013.01); C30B 23/002 (2013.01); C30B 23/063 (2013.01); C30B 29/403 (2013.01); H01L 21/0254 (2013.01); H01L 21/02433 (2013.01); H01L 33/007 (2013.01); H01L 33/16 (2013.01); C23C 14/086 (2013.01); C30B 23/066 (2013.01); C30B 23/08 (2013.01); C30B 29/16 (2013.01); H01L 21/0242 (2013.01); H01L 21/02378 (2013.01); H01L 21/02381 (2013.01); H01L 21/02554 (2013.01); H01L 21/02587 (2013.01); H01L 21/02631 (2013.01); H01L 33/0087 (2013.01); H01L 33/28 (2013.01); H01L 33/32 (2013.01);
Abstract

The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.

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