Tokyo, Japan

Yoshio Yokota


Average Co-Inventor Count = 4.5

ph-index = 6

Forward Citations = 63(Granted Patents)


Company Filing History:


Years Active: 1991-1994

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6 patents (USPTO):Explore Patents

Title: The Innovations of Yoshio Yokota

Introduction

Yoshio Yokota is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Yokota's latest patents include a semiconductor device having a bipolar-MOS composite element pellet. This innovative device is designed for a compression structure, where a semiconductor substrate with a MOS composite element is electrically connected to an external part via an electrode plate compressed to the substrate. Another notable patent is a method of making a semiconductor device of high withstand voltage. This method involves doping phosphorus into one major surface of an n-type silicon semiconductor substrate and boron into the other major surface. The process results in the formation of an n-buffer layer and a p-base layer, enhancing the device's performance.

Career Highlights

Yokota is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to explore and develop cutting-edge semiconductor technologies that have wide-ranging applications.

Collaborations

Yokota has collaborated with notable colleagues, including Mitsuhiko Kitagawa and Kazuo Watanuki. These partnerships have fostered innovation and contributed to the success of various projects within the semiconductor field.

Conclusion

Yoshio Yokota's contributions to semiconductor technology are noteworthy and impactful. His patents reflect a deep understanding of the complexities involved in semiconductor design and manufacturing. His work continues to influence the industry and pave the way for future innovations.

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