This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1977.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1977
Title: The Innovations of Yoshio Hom-Ma
Introduction
Yoshio Hom-Ma is a notable inventor based in Kokubunji, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to advancements that enhance the manufacturing processes of semiconductor devices.
Latest Patents
Yoshio Hom-Ma holds a patent for a method of fabricating semiconductor devices utilizing a physical ion etching process. This innovative approach allows for an even surface of an SiO₂ layer on an uneven Si body. The process involves forming a photoresist layer of KTFR on the uneven surface and etching the SiO₂ layer with rf sputter etching to expose a predetermined surface.
Career Highlights
Hom-Ma is associated with Hitachi, Ltd., a leading company in technology and electronics. His work at Hitachi has been instrumental in pushing the boundaries of semiconductor manufacturing. He has demonstrated a commitment to innovation throughout his career.
Collaborations
Yoshio Hom-Ma has collaborated with Tadao Kaji, another professional in the field. Their partnership has contributed to the development of advanced technologies in semiconductor fabrication.
Conclusion
Yoshio Hom-Ma's contributions to semiconductor technology through his innovative patent and collaboration with industry professionals highlight his importance in the field. His work continues to influence the future of semiconductor manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile