Location History:
- Suita, JP (2011 - 2014)
- Osaka, JP (2011 - 2021)
Company Filing History:
9 out of 6,896 
6 out of 989 
2 out of 4,283 
Years Active: 2011-2021
Title: Yoshio Aso: Innovator in Semiconductor Materials
Introduction
Yoshio Aso is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor materials, particularly in the development of novel compounds for organic thin-film solar cells. With a total of 12 patents to his name, Aso's work continues to influence advancements in technology.
Latest Patents
Among his latest patents, Aso has developed a fullerene derivative and n-type semiconductor material. This invention aims to provide a novel fullerene derivative that can be utilized in n-type semiconductor materials for organic thin-film solar cells and similar applications. The fullerene derivative is represented by a specific formula, where various organic groups and substituents play a crucial role in its functionality. Another significant patent involves a naphthobischalcogenadiazole derivative and its production method. This derivative serves as an intermediate for producing a naphthobischalcogenadiazole compound that incorporates a fluorine atom, showcasing Aso's innovative approach to material science.
Career Highlights
Yoshio Aso has had a distinguished career, working with notable organizations such as Sumitomo Chemical Company and Osaka University. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.
Collaborations
Aso has worked alongside esteemed colleagues, including Yutaka Ie and Masato Ueda. Their collaborative efforts have further advanced the research and development of semiconductor materials.
Conclusion
Yoshio Aso's contributions to the field of semiconductor materials are noteworthy and impactful. His innovative patents and collaborations reflect his dedication to advancing technology in this critical area.