The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2019
Filed:
May. 16, 2014
Applicants:
Daikin Industries, Ltd., Osaka, JP;
Osaka University, Osaka, JP;
Inventors:
Takabumi Nagai, Osaka, JP;
Kenji Adachi, Osaka, JP;
Yoshio Aso, Osaka, JP;
Yutaka Ie, Osaka, JP;
Makoto Karakawa, Osaka, JP;
Assignees:
DAIKIN INDUSTRIES, LTD., Osaka, JP;
OSAKA UNIVERSITY, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C07D 209/70 (2006.01); C08K 3/04 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0047 (2013.01); C07D 209/70 (2013.01); C08K 3/045 (2017.05); H01L 51/005 (2013.01); H01L 51/0036 (2013.01); H01L 51/0037 (2013.01); C08G 2261/124 (2013.01); C08G 2261/3142 (2013.01); C08G 2261/3223 (2013.01); C08G 2261/3243 (2013.01); C08G 2261/91 (2013.01); H01L 51/4253 (2013.01); Y02E 10/549 (2013.01);
Abstract
The present invention is a material having excellent performance as an n-type semiconductor material, in particular for organic thin-film solar cells. The present invention provides an n-type semiconductor consisting of a fullerene derivative having a purity of 99% or more, the fullerene derivative being represented by formula (1):