Yamatokoriyama, Japan

Yoshinori Ohitsu

This inventor holds 5 USPTO granted patents. Top assignee: Sharp Kabushiki Kaisha Corporation. Active years: 1999-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshinori Ohitsu. Retrieved from https://idiyas.com/inventor/yoshinori-ohitsu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 80.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Yamatokooriyama, JP (1999 - 2005)
  • Nara, JP (2006)

Company Filing History:


Years Active: 1999-2006

Loading Chart...
5 patents (USPTO):Explore Patents

Title: The Innovations of Yoshinori Ohitsu

Introduction

Yoshinori Ohitsu is a prominent inventor based in Yamatokooriyama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on the development of advanced semiconductor laser elements and devices.

Latest Patents

Ohitsu's latest patents include a semiconductor laser element and a manufacturing method for the same. This semiconductor laser element features a clad layer of a first conductivity type, an active layer, and a first clad layer of a second conductivity type. The design incorporates a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, layered in a specific order. Additionally, a dielectric film is formed on the ridge sides, excluding the top portion, and a metal electrode layer covers the ridge. The dimensions of the cap layer and the top surface of the second clad layer are approximately equal.

Another notable patent is for a semiconductor laser device and its fabricating method. This device includes an n-type first cladding layer, an active layer, and a p-type second cladding layer formed on an n-type semiconductor substrate. An n-type current block layer with a stripe-shaped groove-like removed portion is integrated into the design, along with a p-type third cladding layer. The second cladding layer is characterized by a p-type C impurity concentration ranging from 3×10 cm to 2×10 cm.

Career Highlights

Yoshinori Ohitsu is currently employed at Sharp Kabushiki Kaisha Corporation, where he continues to innovate in the semiconductor field. His work has been instrumental in advancing the capabilities of semiconductor laser technology.

Collaborations

Ohitsu has collaborated with notable colleagues, including Keisuke Miyazaki and Yoshihisa Fujii. Their combined expertise has contributed to the successful development of various semiconductor technologies.

Conclusion

Yoshinori Ohitsu's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative designs continue to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…