The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2006
Filed:
Nov. 22, 2004
Masayuki Ohta, Yamtokoriyama, JP;
Takahiro Hashimoto, Yamtokoriyama, JP;
Yoshinori Ohitsu, Nara, JP;
Hiroyuki Tsujii, Kashiba, JP;
Satofumi Kinei, Soraku-gun, JP;
Noboru Oshima, Nara, JP;
Shinji Kaneiwa, Nara, JP;
Masayuki Ohta, Yamtokoriyama, JP;
Takahiro Hashimoto, Yamtokoriyama, JP;
Yoshinori Ohitsu, Nara, JP;
Hiroyuki Tsujii, Kashiba, JP;
Satofumi Kinei, Soraku-gun, JP;
Noboru Oshima, Nara, JP;
Shinji Kaneiwa, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor laser element comprising: a clad layer of a first conductivity type; an active layer; a first clad layer of a second conductivity type; a ridge made of a second clad layer of the second conductivity type and a cap layer of the second conductivity type, which are layered on the first clad layer of the second conductivity type, in this order starting from the first clad layer side; a dielectric film formed on ridge sides other than a top portion of the ridge; and a metal electrode layer that covers the ridge, wherein the width of the bottom of the cap layer and the width of the top surface of the second clad layer are approximately equal.