Nara, Japan

Shinji Kaneiwa

This inventor holds 39 USPTO granted patents, primarily in Semiconductor Lasers. Top assignees: Sharp Kabushiki Kaisha Corporation, 501 Sharp Kabushiki Kaisha. Active years: 1987-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinji Kaneiwa. Retrieved from https://idiyas.com/inventor/shinji-kaneiwa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 789(Granted Patents)


Location History:

  • Tenri, JP (1987 - 1990)
  • Nara, JP (1987 - 2006)

Company Filing History:


Years Active: 1987-2006

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Areas of Expertise:
Semiconductor Laser
Diffraction Grating
Vapor Growth
Buried Heterostructure
Integrated Optical Disc
Longitudinal Oscillation
Optical Device
Light Modulator
VSIS Laser
Thermal Management
Device Stability
Facet Life
39 patents (USPTO):Explore Patents

Title: **Shinji Kaneiwa: Innovator in Semiconductor Technology**

Introduction

Shinji Kaneiwa, based in Nara, Japan, is a prominent inventor with a remarkable portfolio of 39 patents. His contributions to the field of semiconductor technology have advanced various applications and processes, enhancing the capabilities and efficiencies of laser devices.

Latest Patents

Two of Shinji Kaneiwa's latest patents exemplify his innovative spirit. The first is a **semiconductor laser element and manufacturing method**, which outlines the construction of a semiconductor laser element consisting of a meticulously designed layered structure. This includes a clad layer of a first conductivity type, an active layer, and a ridge made of a second clad layer, culminating in a metal electrode layer. Notably, this design emphasizes the importance of equal widths between the cap layer and the second clad layer, thus optimizing performance.

The second notable patent is a **method for producing a semiconductor laser device with a high growth rate**. This invention presents a streamlined process for achieving a semiconductor laser device that encompasses a light-emitting section and an electrode. It employs vapor phase epitaxy methods to ensure that the growth rate of the cap layer significantly surpasses that of the light-emitting section, resulting in efficient production.

Career Highlights

Shinji Kaneiwa has had an impressive career, marked by his tenure at prominent organizations such as Sharp Kabushiki Kaisha and 501 Sharp Kabushiki Kaisha. His work at these companies has been instrumental in driving forward innovative projects in the semiconductor sector, contributing to the development of cutting-edge technologies.

Collaborations

Throughout his career, Kaneiwa has worked alongside notable colleagues, including Haruhisa Takiguchi and Toshihiko Yoshida. Their collaborative efforts have significantly enriched the projects they undertook, fostering an environment of innovation and excellence in semiconductor research and development.

Conclusion

Shinji Kaneiwa’s extensive patent portfolio and his impactful contributions to semiconductor technology are a testament to his innovative prowess as an inventor. His work continues to inspire future advancements in the field, establishing him as a key figure in the evolution of laser devices and semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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