Yoshimi Shioya

Title: Yoshimi Shioya: Innovator in Semiconductor Technology

Introduction

Yoshimi Shioya is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. Her innovative methods have advanced the production processes of semiconductor devices, showcasing her expertise and dedication to the industry.

Latest Patents

Among her latest patents is a method of producing a contact plug. This method involves forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line. It includes the steps of forming semiconductor material, substituting it with a metal through a chemical reaction, and ultimately forming a conductor line over the metal within the window. Another notable patent is the method of selectively depositing tungsten upon a semiconductor substrate. This process allows for the precise deposition of tungsten on a silicon substrate, facilitating the fabrication of accurate and reliable wirings essential for the production of very large scale integration (VLSI) of sub-micron order.

Career Highlights

Yoshimi Shioya has built a successful career at Fujitsu Corporation, where she has been instrumental in developing advanced semiconductor technologies. Her work has not only contributed to the company's success but has also had a lasting impact on the semiconductor industry as a whole.

Collaborations

Yoshimi has collaborated with notable colleagues, including Mamoru Maeda and Mikio Takagi. These partnerships have fostered innovation and have led to the successful development of various technologies in the semiconductor field.

Conclusion

Yoshimi Shioya's contributions to semiconductor technology through her innovative patents and collaborations highlight her as a key figure in the industry. Her work continues to influence advancements in semiconductor production methods, ensuring her legacy as a leading inventor.