The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 1990
Filed:
Mar. 04, 1988
Applicant:
Inventors:
Yoshimi Shioya, Yokohama, JP;
Yuji Furumura, Kawasaki, JP;
Yasushi Ohyama, Kodaira, JP;
Shin-ichi Inoue, Kawasaki, JP;
Tsutomu Ogawa, Machida, JP;
Kiyoshi Watanabe, Kuwana, JP;
Hiroshi Goto, Yokohama, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437192 ; 437193 ; 437203 ; 148D / ; 148D / ;
Abstract
A method of producing a semiconductor device comprising the steps of: forming a window or contact hole in an insulating layer to expose a portion of a semiconductor substrate or a lower conductor line; forming semiconductor material (silicon) in the window; substituting the material with a metal (tungsten) by reaction of the semiconductor material with a metal compound (WF.sub.6 gas); and forming a conductor line over the metal within the window.