Location History:
- Settsu, JP (1995)
- Nara, JP (2003 - 2004)
Company Filing History:
Years Active: 1995-2004
Title: The Innovations of Yoshiko Mino
Introduction
Yoshiko Mino is a prominent inventor based in Nara, Japan. She has made significant contributions to the field of semiconductor technology. With a total of 3 patents to her name, her work focuses on enhancing the performance of semiconductor devices.
Latest Patents
Mino's latest patents include advancements in semiconductor thin films and methods for producing them. One notable invention is a semiconductor device that achieves high field effect mobility by increasing the grain size of a silicon thin film. This process involves forming a two-layer insulation structure on a transparent insulated substrate. The lower insulation layer, which contacts the substrate, has higher thermal conductivity than the upper layer. The upper layer is then patterned to create stripes, followed by the formation of an amorphous silicon thin film. Laser irradiation is applied in a direction parallel to the stripe pattern, transforming the amorphous silicon into a polycrystalline silicon thin film.
Career Highlights
Yoshiko Mino is currently employed at Matsushita Electric Industrial Co., Ltd. Her work has been instrumental in advancing semiconductor technology, particularly in the development of high-performance devices.
Collaborations
Mino has collaborated with notable coworkers, including Yoshinao Taketomi and Keizaburo Kuramasu. Their combined expertise has contributed to the success of her innovative projects.
Conclusion
Yoshiko Mino's contributions to semiconductor technology exemplify her dedication to innovation. Her patents reflect her commitment to enhancing device performance and advancing the field.