Matsushita Electric Industrial Co., Ltd.

Yoshiko Mino

Mikihiko Nishitani

Masashi Goto

Masumi Izuchi

Hiroshi Tsutsu

Keizaburo Kuramasu

Yoshinao Taketomi

Hiroshi Satani

Hikaru Nishitani

Kazufumi Ogawa

Norihisa Mino

In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate . In the insulation layer, a lower insulation layer , which is in contact with the transparent insulating substrate , is made to have a higher thermal conductivity than an upper insulation layer . Thereafter, the upper insulation layer is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer . Thus, the amorphous silicon thin film is formed into a polycrystalline silicon thin film

Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same

Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same

In the present invention, for the purpose of precluding defective image caused by stains adhering on the surfaces of a semiconductor device and a color filter of a solid-state color image sensor, a semiconductor device excellent in the water- and oil- repellency, anti-soiling property and durability is provided, by forming on the each surface a uniform water- and oil-repellent protective film with a thickness on the order of nanometer, by treating with a nonaqueous solvent containing a chlorosilane surface treating agent having a fluoroalkyl.

Semiconductor device

Growing community of inventors

Nara, Japan

Yoshiko Mino