Yoshiko Kohanawa

Title: **Innovative Contributions of Yoshiko Kohanawa in Semiconductor Memory Technology**

Introduction

Yoshiko Kohanawa, an accomplished inventor based in Yokohamashi, Japan, has made significant strides in the field of semiconductor memory devices. With a keen insight into modern technology, her work reflects the ongoing evolution and enhancement of data storage solutions.

Latest Patents

Yoshiko holds a patent for a revolutionary non-volatile semiconductor memory device. This innovative device includes a memory cell characterized by a capacitor that is formed by stacking a semiconductor layer with a ferroelectric layer positioned between two electrodes. This configuration creates a semiconductor-ferroelectric junction which enhances memory performance. The unique writing circuit operates by applying a voltage that exceeds the coercive electric field of the ferroelectric material, thereby aligning the polarization direction of the ferroelectric layer. This process sets the capacitance at a predetermined value, allowing data to be written effectively. Additionally, a reading circuit employs a voltage less than the coercive electric field to accurately read the stored data.

Career Highlights

Yoshiko has successfully secured a patent that highlights her inventive prowess in the semiconductor technology arena. Her work not only contributes to her professional development but also enhances the technological landscape. Throughout her career, she has continuously explored innovative solutions to improve data storage technology.

Collaborations

Yoshiko has collaborated with esteemed colleagues such as Motomasa Imai and Kazuhide Abe. These partnerships illustrate the significance of teamwork in advancing technological innovations, allowing for a rich exchange of ideas and expertise.

Conclusion

In conclusion, Yoshiko Kohanawa stands out as a pioneering inventor whose contributions to the field of non-volatile semiconductor memory devices represent significant advancements in technology. Her patent, a testament to her skills and innovations, showcases the potential for further developments in memory technology. With collaborative efforts and a dedication to innovation, Yoshiko continues to be an influential figure in her field.