Tokyo, Japan

Yoshikatsu Kanamori

This inventor holds 1 USPTO granted patent. Top assignee: Kokusai Electric Co., Ltd.. Active years: 1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikatsu Kanamori. Retrieved from https://idiyas.com/inventor/yoshikatsu-kanamori

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1997

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yoshikatsu Kanamori

Introduction

Yoshikatsu Kanamori is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor manufacturing. His work focuses on enhancing the efficiency and effectiveness of thermal treatment processes.

Latest Patents

Kanamori holds a patent for a thermal treatment furnace designed for use in semiconductor systems. This innovative furnace includes a scavenger that sealingly encloses the lower end of a reaction tube. This design minimizes gas leakage from the reaction tube, thereby improving the overall performance of the semiconductor manufacturing process. He has 1 patent to his name.

Career Highlights

Kanamori is associated with Kokusai Electric Co., Ltd., a leading company in the semiconductor industry. His role at the company has allowed him to work on cutting-edge technologies that advance semiconductor manufacturing.

Collaborations

Throughout his career, Kanamori has collaborated with talented individuals such as Tomoshi Taniyama and Hideki Kaihotsu. These collaborations have contributed to the development of innovative solutions in the semiconductor field.

Conclusion

Yoshikatsu Kanamori's contributions to semiconductor manufacturing through his innovative patent demonstrate his expertise and commitment to advancing technology. His work continues to influence the industry positively.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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