Tokyo, Japan

Yoshihito Hagihara

This inventor holds 2 USPTO granted patents. Top assignee: Asahi Kasei Kabushiki Kaisha. Active years: 2021-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihito Hagihara. Retrieved from https://idiyas.com/inventor/yoshihito-hagihara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2021-2023

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2 patents (USPTO):Explore Patents

Title: Innovations of Yoshihito Hagihara in Nitride Semiconductor Technology

Introduction

Yoshihito Hagihara is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of nitride semiconductor elements. With a total of 2 patents to his name, his work has implications for various applications in electronics and lighting.

Latest Patents

Hagihara's latest patents focus on enhancing the performance of nitride semiconductor elements. His inventions include a nitride semiconductor element, a nitride semiconductor light emitting element, and an ultraviolet light emitting element. These innovations aim to provide a nitride semiconductor element that exhibits improved contact resistance reduction effects, especially in light emitting elements that contain AlGaN with a high aluminum composition. The design features a substrate, a first conductivity type first nitride semiconductor layer formed on the substrate, and a first electrode layer that contains aluminum and nickel. This electrode layer is strategically designed to enhance the contact surface with the first nitride semiconductor layer.

Career Highlights

Hagihara is currently associated with Asahi Kasei Kabushiki Kaisha, a leading company in the chemical and materials industry. His work at the company has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Hagihara has collaborated with talented individuals such as Aya Yokoyama and Ryosuke Hasegawa. These collaborations have fostered an environment of innovation and creativity, leading to the development of groundbreaking technologies.

Conclusion

Yoshihito Hagihara's contributions to nitride semiconductor technology are noteworthy and impactful. His patents reflect a commitment to improving electronic components and enhancing their performance. His work continues to influence the field and pave the way for future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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