The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Nov. 08, 2018
Asahi Kasei Kabushiki Kaisha, Tokyo, JP;
Aya Yokoyama, Tokyo, JP;
Yoshihito Hagihara, Tokyo, JP;
Ryosuke Hasegawa, Tokyo, JP;
Akira Yoshikawa, Tokyo, JP;
Ziyi Zhang, Tokyo, JP;
Tomohiro Morishita, Tokyo, JP;
ASAHI KASEI KABUSHIKI KAISHA, Tokyo, JP;
Abstract
To provide a nitride semiconductor element having a better contact resistance reduction effect also in the case of a light emitting element containing AlGaN having a high Al composition. The nitride semiconductor element has a substrate, a first conductivity type first nitride semiconductor layerformed on the substrate, and a first electrode layerformed on the first nitride semiconductor layer. The first electrode layercontains aluminum and nickel, and both aluminum and an alloy containing aluminum and nickel are present in a contact surface to the first nitride semiconductor layeror in the vicinity of the contact surface.