Yoshihiro Kanno

Title: Innovations of Yoshihiro Kanno

Introduction

Yoshihiro Kanno is a notable inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory devices, holding a total of 2 patents. His work focuses on enhancing the efficiency and functionality of three-dimensional memory devices.

Latest Patents

Yoshihiro Kanno's latest patents include a three-dimensional memory device with thickened word lines in the terrace region and a method of making thereof. This innovative memory device features an alternating stack of insulating layers and electrically conductive layers situated over a substrate. The memory stack structures are located in a memory array region, each comprising a memory film and a vertical semiconductor channel. The contact via structures are positioned in the terrace region, connecting to respective electrically conductive layers. Each conductive layer has a first thickness throughout the memory array region and a contact portion with a second thickness greater than the first within the terrace region. This design prevents etch-through during the formation of contact via cavities.

Career Highlights

Yoshihiro Kanno is currently employed at Sandisk Technologies Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of three-dimensional memory devices.

Collaborations

Some of his notable coworkers include Senaka Kanakamedala and Raghuveer S Makala, who have collaborated with him on various projects within the company.

Conclusion

Yoshihiro Kanno's contributions to the field of memory devices exemplify the importance of innovation in technology. His patents reflect a commitment to enhancing memory device performance and efficiency.