Sandisk Technologies Inc.

Yoshihiro Kanno

Raghuveer S Makala

Yanli Zhang

Senaka Kanakamedala

Murshed Chowdhury

Jin Liu

Yao-Sheng Lee

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate. Memory stack structures are located in a memory array region, each of which includes a memory film and a vertical semiconductor channel. Contact via structures located in the terrace region and contact a respective one of the electrically conductive layers. Each of the electrically conductive layers has a respective first thickness throughout the memory array region and includes a contact portion having a respective second thickness that is greater than the respective first thickness within a terrace region. The greater thickness of the contact portion prevents an etch-through during formation of contact via cavities for forming the contact via structures.

Three-dimensional memory device with thickened word lines in terrace region and method of making thereof

Three-dimensional memory device with thickened word lines in terrace region

Growing community of inventors

Yokkaichi, Japan

Yoshihiro Kanno