Yoshihiko Okamoto

Title: Innovations of Yoshihiko Okamoto

Introduction

Yoshihiko Okamoto is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on methods for forming conductive films and doped films, which are essential in the manufacturing of semiconductor devices.

Latest Patents

One of his latest patents is a method for forming a surface-roughened conductive film on a semiconductor wafer. This process involves treating an amorphous silicon conductive film with hydrofluoric acid to remove a natural oxide film. Following this, a very thin oxide film is formed, and a silane gas is used to create a nucleating film. The surface of the conductive film is then roughened through annealing, resulting in a uniformly roughened surface. The thickness of the oxide film ranges from 0.5 angstroms to 20 angstroms. Another significant patent is a method of forming a doped film, which includes preparing gas sources for film forming and doping gases, arranging substrates in a process tube, and controlling the reaction conditions to achieve the desired film properties.

Career Highlights

Yoshihiko Okamoto has worked with prominent companies in the semiconductor industry, including Mitsubishi Electric Corporation and Tokyo Electron Limited. His experience in these organizations has allowed him to develop innovative techniques that enhance semiconductor manufacturing processes.

Collaborations

Throughout his career, Okamoto has collaborated with esteemed colleagues such as Shinichi Jintate and Toshiharu Nishimura. These partnerships have contributed to the advancement of technology in the semiconductor field.

Conclusion

Yoshihiko Okamoto's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced semiconductor manufacturing techniques.