Yoshifumi Okamoto

Title: The Innovations of Yoshifumi Okamoto

Introduction

Yoshifumi Okamoto is a prominent inventor based in Otsu, Japan. He has made significant contributions to the field of photoelectric conversion technology. With a total of 8 patents to his name, Okamoto's work has advanced the development of silicon-based thin-film devices.

Latest Patents

Okamoto's latest patents include a method of producing silicon thin-film photoelectric transducers and a plasma CVD apparatus used for this method. In his method of manufacturing a silicon-based thin-film photoelectric converter, a crystalline photoelectric conversion layer is deposited by plasma CVD under specific conditions. The temperature of the underlying film is maintained at a maximum of 550°C, and a silane-based gas combined with hydrogen gas is introduced into the plasma reaction chamber. The flow rate of hydrogen gas is at least 50 times that of the silane-based gas, with the pressure in the chamber set to 3 Torr and a deposition speed of 17 nm/min. Additionally, he has developed a method for fabricating a silicon-based thin-film photoelectric conversion device, utilizing a plasma CVD process to deposit a polycrystalline photoelectric conversion layer under similar temperature and pressure conditions.

Career Highlights

Throughout his career, Yoshifumi Okamoto has worked with notable companies such as Kaneka Corporation and Kanegafuchi Kagaku Kogyo Kabushiki Kaisha. His experience in these organizations has allowed him to refine his expertise in the field of photoelectric technology.

Collaborations

Okamoto has collaborated with esteemed colleagues, including Masashi Yoshimi and Kenji Yamamoto. Their joint efforts have contributed to the advancement of innovative technologies in the industry.

Conclusion

Yoshifumi Okamoto's contributions to the field of photoelectric conversion technology are noteworthy. His innovative methods and collaborations have significantly impacted the development of silicon-based thin-film devices.