The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2001
Filed:
Sep. 03, 1999
Yoshifumi Okamoto, Otsu, JP;
Masashi Yoshimi, Kobe, JP;
Kaneka Corporation, Osaka, JP;
Abstract
A method of fabricating a silicon-based thin-film photoelectric conversion device, where a plasma CVD process is used to deposit a polycrystalline photoelectric conversion layer. During the deposition of the photoelectric conversion layer, the temperature of the underlying layer is less than 550° C., the pressure in the plasma chamber is more than 5 Torr, and the ratio of the flow rates of a hydrogen gas and a silane-type gas is more than 50. In addition, one of the following operations is carried out during the deposition to change the relevant parameters between the start and end of the deposition. First, the distance between the plasma discharge electrodes is increased gradually or in steps. Second, the pressure of the reaction chamber is increased gradually or in steps. Third, the flow rate of the silane-type gas is increased gradually. Fourth, the plasma discharge power density is reduced gradually or in steps.