The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2001
Filed:
Sep. 03, 1999
Masashi Yoshimi, Kobe, JP;
Yoshifumi Okamoto, Otsu, JP;
Kaneka Corporation, Osaka, JP;
Abstract
A p type semiconductor layer, an i type amorphous photoelectric conversion layer and an n type semiconductor layer of an amorphous type photoelectric conversion unit are formed in separate deposition chambers, respectively. A p type semiconductor layer, an i type crystalline photoelectric conversion layer and an n type semiconductor layer of crystalline type photoelectric conversion unit are formed continuously in one deposition chamber. Accordingly, a method of manufacturing a tandem type thin film photoelectric conversion device is obtained by which a tandem type thin film photoelectric conversion device having superior performance and high quality can be formed by a simple apparatus at a low cost with superior productivity.