Company Filing History:
Years Active: 2017
Title: Yoshiaki Toyada: Innovator in Semiconductor Technology
Introduction
Yoshiaki Toyada is a prominent inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and reliability of semiconductor devices.
Latest Patents
Toyada's latest patents include a MOS-driven semiconductor device and a method for manufacturing this device. The innovation involves forming a mask to create an nsource layer using a nitride film on the substrate's surface before trench formation. This process ensures a sufficient width of the nsource layer, leading to stable contact with the source electrode. Additionally, a CVD oxide film, serving as an interlayer insulating film, is formed on doped poly-silicon used as a gate electrode embedded in the trench. Non-doped poly-silicon is also applied on the CVD oxide film, which helps suppress void generation in the oxide film. This method simplifies the manufacturing of semiconductor apparatuses.
Career Highlights
Yoshiaki Toyada is currently employed at Fuji Electric Co., Ltd., where he continues to innovate in semiconductor technology. His expertise and dedication have positioned him as a key figure in his field.
Collaborations
Some of Toyada's notable coworkers include Kin-On Sin and Chun-Wai Ng, who contribute to the collaborative efforts in advancing semiconductor technologies.
Conclusion
Yoshiaki Toyada's contributions to semiconductor technology through his patents and work at Fuji Electric Co., Ltd. highlight his role as an influential inventor in the industry. His innovations continue to pave the way for advancements in semiconductor manufacturing.