This inventor holds 1 USPTO granted patent. Top assignees: Fujitsu Corporation, Tokyo Institute of Technology. Active years: 2008.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
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Years Active: 2008
Title: Yoshiaki Tabuchi: Innovator in Ferroelectric Memory Technology
Introduction
Yoshiaki Tabuchi is a prominent inventor based in Tokyo, Japan. He is known for his significant contributions to the field of ferroelectric memory technology. With a focus on multivalent data recording and reading methods, his work has the potential to revolutionize data storage solutions.
Latest Patents
Yoshiaki Tabuchi holds 1 patent related to a ferroelectric memory device. This innovative device features a gate electrode formed on a semiconductor body via a ferroelectric film. The design includes first and second diffusion regions on either side of a channel region. The ferroelectric film comprises three distinct regions, each carrying mutually independent polarizations, enhancing the device's data recording capabilities.
Career Highlights
Throughout his career, Yoshiaki has worked with notable organizations, including Fujitsu Corporation and the Tokyo Institute of Technology. His experience in these institutions has allowed him to develop and refine his innovative ideas in memory technology.
Collaborations
Yoshiaki has collaborated with esteemed colleagues such as Yoshihiro Arimoto and Hiromasa Hoko. Their joint efforts have contributed to advancements in the field of ferroelectric memory.
Conclusion
Yoshiaki Tabuchi's work in ferroelectric memory technology exemplifies the innovative spirit of modern inventors. His contributions are paving the way for future advancements in data storage solutions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile