The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Sep. 08, 2005
Yoshihiro Arimoto, Kawasaki, JP;
Hiroshi Ishihara, Tokyo, JP;
Tetsuro Tamura, Kawasaki, JP;
Hiromasa Hoko, Kawasaki, JP;
Koji Aizawa, Tokyo, JP;
Yoshiaki Tabuchi, Tokyo, JP;
Masaomi Yamaguchi, Kawasaki, JP;
Yasuo Nara, Kawasaki, JP;
Kazuhiro Takahashi, Tokyo, JP;
Satoshi Hasegawa, Kanagawa, JP;
Yoshihiro Arimoto, Kawasaki, JP;
Hiroshi Ishihara, Tokyo, JP;
Tetsuro Tamura, Kawasaki, JP;
Hiromasa Hoko, Kawasaki, JP;
Koji Aizawa, Tokyo, JP;
Yoshiaki Tabuchi, Tokyo, JP;
Masaomi Yamaguchi, Kawasaki, JP;
Yasuo Nara, Kawasaki, JP;
Kazuhiro Takahashi, Tokyo, JP;
Satoshi Hasegawa, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
A ferroelectric memory device includes a gate electrode formed on a semiconductor body via a ferroelectric film, first and second diffusion regions being formed in the semiconductor body at respective sides of a channel region, wherein the ferroelectric film comprises a first region located in the vicinity of the first diffusion region, a second region located in the vicinity of the second diffusion region, and a third region located between the first and second regions, wherein the first, second and third regions carry respective, mutually independent polarizations.