Yosef Schacham-Diamand

Title: The Innovative Contributions of Yosef Schacham-Diamand

Introduction

Yosef Schacham-Diamand is a notable inventor based in Ithaca, NY, who has made significant contributions to the field of semiconductor technology. He holds a patent that showcases his expertise in electroless copper deposition, a crucial process in the manufacturing of electronic components.

Latest Patents

Yosef Schacham-Diamand's patent, titled "Protected encapsulation of catalytic layer for electroless copper," presents a method for utilizing electroless copper deposition to form interconnects on a semiconductor. The process begins with the formation of a via or trench in a dielectric layer, followed by the deposition of a titanium nitride (TiN) or tantalum (Ta) barrier layer. A catalytic copper seed layer is then conformally blanket deposited in vacuum over the barrier layer. Without breaking the vacuum, an aluminum protective layer is deposited onto the catalytic layer to encapsulate and protect it from oxidizing. The electroless deposition technique is subsequently employed to auto-catalytically deposit copper on the catalytic layer, filling the via or trench. Finally, the copper and barrier material are polished using chemical-mechanical polishing (CMP) to ensure that only the necessary materials remain in the openings.

Career Highlights

Throughout his career, Yosef Schacham-Diamand has worked with esteemed organizations, including the Cornell Research Foundation Inc. and Intel Corporation. His experience in these companies has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Yosef has collaborated with notable colleagues such as Valery M Dubin and Chiu H Ting, further enhancing his work in the field.

Conclusion

Yosef Schacham-Diamand's innovative patent and career achievements highlight his significant role in advancing semiconductor technology. His contributions continue to impact the industry positively.