Seoul, South Korea

Yoon-Taek Jang

USPTO Granted Patents = 2 

Average Co-Inventor Count = 1.6

ph-index = 2

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2004-2011

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2 patents (USPTO):Explore Patents

Title: Yoon-Taek Jang: Innovator in Semiconductor Technology

Introduction

Yoon-Taek Jang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approaches.

Latest Patents

His latest patents include a method of forming a contact structure with a contact spacer and a method of fabricating a semiconductor device using the same. In this method, an interlayer dielectric layer is formed on a semiconductor substrate. The interlayer dielectric layer is then patterned to create a contact hole that exposes a predetermined region of the semiconductor substrate. A contact spacer is formed on the sidewall of the contact hole using a deposition method that has an inclined deposition direction relative to the main surface of the semiconductor substrate. This innovative approach allows for enhanced semiconductor device fabrication. Additionally, he has developed a fabrication method for metallic nanowires. This method involves forming a layer of autocatalytic metal on a substrate and growing nanowires on the surface of this layer without the need for a lithography process.

Career Highlights

Yoon-Taek Jang has worked with notable organizations such as Samsung Electronics Co., Ltd. and the Korea Institute of Science and Technology. His experience in these leading companies has contributed to his expertise in semiconductor technologies.

Collaborations

He has collaborated with esteemed colleagues, including Yun-Hi Lee and Byeong-kwon Ju, who have also made significant contributions to the field.

Conclusion

Yoon-Taek Jang's innovative work in semiconductor technology and his valuable patents highlight his role as a key inventor in the industry. His contributions continue to influence advancements in semiconductor device fabrication.

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