Samsung Electronics Co., Ltd.

Korea Institute of Science and Technology

Yoon-Taek Jang

Byeong-kwon Ju

Yun-Hi Lee

Chang-Hoon Choi

A method of forming a contact structure with a contact spacer and a method of fabricating a semiconductor device using the same. In the method of forming a contact structure, an interlayer dielectric layer is formed on a semiconductor substrate. The interlayer dielectric layer is patterned, thereby forming a contact hole for exposing a predetermined region of the semiconductor substrate. A contact spacer is formed on a sidewall of the contact hole using a deposition method having an inclined deposition direction with respect to a main surface of the semiconductor substrate. The deposition direction may be set between the main surface and a normal with respect to the main surface. Further, there is provided a method of fabricating a semiconductor device using the method of forming the contact structure.

Method of forming contact structure with contact spacer and method of fabricating semiconductor device using the same

A fabrication method of metallic nanowires includes the steps of: forming a layer of autocatalytic metal with a thickness of 30 nm-1000 nm on the surface of a substrate; and forming nanowires on the front surface of the layer of autocatalytic metal, wherein the substrate is put into an evaporator and the layer of autocatalytic metal is grown by autocatalytic reaction for 10&tilde;5000 seconds. A large amount of nanowires can be grown on a substrate without a lithography process.

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Seoul, South Korea

Yoon-Taek Jang