Yonqzang Zhang

Title: **Innovative Contributions of Yonqzang Zhang in Electrostatic Discharge Devices**

Introduction

Yonqzang Zhang, an accomplished inventor based in Singapore, SG, has made noteworthy contributions to the field of semiconductor technology. His innovative approach in developing electrostatic discharge (ESD) protection circuits has been recognized through a patent that showcases his expertise and technical proficiency.

Latest Patents

Zhang holds a patent for a **Thick Oxide MOS Device Used in ESD Protection Circuit**. This patent describes a novel method for forming a thick oxide electrostatic discharge device utilizing shallow trench isolation technology. The process involves etching a trench into a semiconductor substrate and depositing an oxide layer that fills the trench. After partial etching of the oxide, the remaining oxide forms a protective layer on the sidewalls and bottom of the trench. Subsequently, a gate is formed within the trench, and ion implantation procedures are conducted to create N-wells and source/drain regions that facilitate effective ESD protection in integrated circuits.

Career Highlights

Zhang is currently employed at Chartered Semiconductor Manufacturing Ltd, where he leverages his skills in semiconductor fabrication to innovate and improve device efficiency. Throughout his career, he has focused on enhancing the reliability of electronic components through advanced materials and techniques.

Collaborations

During his time at Chartered Semiconductor Manufacturing, Zhang has worked alongside talented colleagues such as Jun Song and Shyue Fong Quek. Their collaborative efforts have contributed to the advancement of ESD protection technologies, showcasing the power of teamwork in the innovation process.

Conclusion

In conclusion, Yonqzang Zhang’s dedication to innovation in electrostatic discharge devices reflects his significant impact on the semiconductor industry. With one patent to his name, he continues to push the boundaries of technology, ensuring the development of more reliable electronic components for future applications.