Yongzhi Fang

Title: Yongzhi Fang and Semiconductor Manufacturing Innovation.

Introduction

Yongzhi Fang is an inventor associated with Wuxi, China, and CSMC Technologies Fab2 Co., Ltd. The available information identifies 1 patent associated with Fang.

Latest Patents

Fang’s patent, “Method for Manufacturing a Semiconductor Device,” describes a process for forming trenches and conductive structures in layered dielectric materials. The method stacks an etching termination layer, a first dielectric layer, an auxiliary dielectric layer, and a second dielectric layer. It then patterns openings in the upper layers, forms a first trench extending into the first dielectric layer, and creates a second trench that reaches the etching termination layer. A conductive layer is formed in both trenches.

Career Highlights

The patent reflects work on semiconductor-device fabrication, particularly the formation of patterned trenches and conductive features within dielectric layers. Fang is associated with CSMC Technologies Fab2 Co., Ltd., a company in the semiconductor manufacturing field.

Collaborations

Fang’s listed coworkers include Wenwen Zhang and Renrui Huang. The available information does not specify their roles or the nature of their collaboration on the patent.

Conclusion

Yongzhi Fang’s identified patent focuses on a layered semiconductor manufacturing process that forms trenches and fills them with conductive material, highlighting a contribution to semiconductor-device fabrication.