The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jun. 17, 2022
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Abstract
A manufacturing method for a semiconductor device includes: forming an etching termination layer, a first dielectric layer, an auxiliary dielectric layer and a second dielectric layer which are successively stacked from bottom to top; by taking a photoresist layer as an etching barrier layer, patterning the second dielectric layer to obtain a first opening pattern, the bottom of the first opening being provided with a second opening pattern exposing part of the auxiliary dielectric layer; forming a first trench passing through the second dielectric layer and the auxiliary dielectric layer and extending to the first dielectric layer, and forming a second trench passing through the first dielectric layer from the bottom of the first trench and extending to the etching termination layer; and forming a conductive layer in the first and second trenches.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile